INASP PHASE FORMATIONS DURING THE GROWTH OF A GAINASP/INP DISTRIBUTED-FEEDBACK LASER-DIODE STRUCTURE ON CORRUGATED INP USING METALORGANIC VAPOR-PHASE EPITAXY

An InAsP phase formed during the heatup time to the growth temperature of MOVPE was investigated by transmission electron microscopy and energy dispersive spectroscopy. The thickness of the InAsP phase on the concave regions of corrugation is increased with increased AsH3 partial pressure and heat-up time. The arsenic composition in InAsP was also increased with the increase of AsH3 partial pressure during the heat-up time. Dislocations and defects were not generated below an AsH3 partial pressure of 2.4×10-3 Torr, although strain was induced according to the thickness and composition of InAsP formed on the concave regions of corrugation.© 1995 American Institute of Physics.