AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH SILICON DIOXIDE GATE GROWN IN NITRIC-ACID GAS

被引：0
|
作者：
ZHANG, H
KANOH, H
YAMAJI, S
SUGIURA, O
MATSUMURA, M
机构：
[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 01期
关键词：
Amorphous-silicon; MOS structure; Silicon; Silicon dioxide; Thermal oxidation; Thin-film transistor;
D O I：
10.1143/JJAP.29.58
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A low-temperature thermal-oxidation method of silicon wherein nitric acid in gas phase is used as an oxidizing agent has been developed. Five nanometers-thick oxide was grown within 24 h at temperatures below 350°C. Interface and bulk characteristics were as good as those of high-temperature thermal oxide grown by conventional methods. The new oxide has been applied successfully to the gate insulator of amorphous-silicon thin-film transistors. It was found that the transistor had stabler characteristics than the conventional one with plasma-deposited silicon nitride. © 1990 IOP Publishing Ltd.
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页码：58 / 61
页数：4
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