AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH SILICON DIOXIDE GATE GROWN IN NITRIC-ACID GAS

A low-temperature thermal-oxidation method of silicon wherein nitric acid in gas phase is used as an oxidizing agent has been developed. Five nanometers-thick oxide was grown within 24 h at temperatures below 350°C. Interface and bulk characteristics were as good as those of high-temperature thermal oxide grown by conventional methods. The new oxide has been applied successfully to the gate insulator of amorphous-silicon thin-film transistors. It was found that the transistor had stabler characteristics than the conventional one with plasma-deposited silicon nitride. © 1990 IOP Publishing Ltd.