INVERSION-CHANNEL SI SIGE HETEROJUNCTION FIELD-EFFECT TRANSISTOR

被引：4
|
作者：
KOVACIC, SJ
SIMMONS, JG
NOEL, JP
HOUGHTON, DC
BUCHANAN, M
机构：
[1] CTR ELECTROPHOTON MAT & DEVICES,HAMILTON L8S 4L7,ONTARIO,CANADA
[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 24期
关键词：
FIELD-EFFECT TRANSISTORS; TRANSISTORS; SEMICONDUCTOR DEVICES;
D O I：
10.1049/el:19921435
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The p-channel operation of a selfaligned heterojunction field-effect transistor (HFET) based on an Si/Si0.75Ge0.25 heterostructure is demonstrated. Extrinsic transconductance g(m) greater than 8 ms/mm for a device with 1 mum gate length was measured at 300 K. The high-frequency 3 dB point has been measured to be 1.8 GHz.
引用
收藏
页码：2234 / 2235
页数：2
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