HETEROJUNCTION FIELD-EFFECT TRANSISTOR LASER

被引：2

作者：

SUZUKI, Y ^{[1
]}

YAJIMA, H ^{[1
]}

SHIMOYAMA, K ^{[1
]}

INOUE, Y ^{[1
]}

KATOH, M ^{[1
]}

GOTOH, H ^{[1
]}

机构：

[1] MITSUBISHI KASEI CO,RES CTR,THIN FILMS LAB,USHIKU,IBARAKI 30012,JAPAN

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 19期

关键词：

Field effect transistors; Semiconductor lasers;

D O I：

10.1049/el:19901046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A successful demonstration of a hete.rojunction field effect transistor laser is described. A typical threshold current of 45 mA in a laser mode and a transconductance of 62 mS in a FET mode are obtained for the same device. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1632 / 1633

页数：2

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