HETEROJUNCTION FIELD-EFFECT TRANSISTOR LASER

被引：2

作者：

SUZUKI, Y ^{[1
]}

YAJIMA, H ^{[1
]}

SHIMOYAMA, K ^{[1
]}

INOUE, Y ^{[1
]}

KATOH, M ^{[1
]}

GOTOH, H ^{[1
]}

机构：

[1] MITSUBISHI KASEI CO,RES CTR,THIN FILMS LAB,USHIKU,IBARAKI 30012,JAPAN

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 19期

关键词：

Field effect transistors; Semiconductor lasers;

D O I：

10.1049/el:19901046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A successful demonstration of a hete.rojunction field effect transistor laser is described. A typical threshold current of 45 mA in a laser mode and a transconductance of 62 mS in a FET mode are obtained for the same device. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1632 / 1633

页数：2

共 50 条

[31] ZNO FIELD-EFFECT TRANSISTOR
BOESEN, GF
JACOBS, JE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2094 - &
[32] A MAGNETIC FIELD-EFFECT TRANSISTOR
MANNHART, J
HUEBENER, RP
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1829 - 1831
[33] A UNIPOLAR FIELD-EFFECT TRANSISTOR
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376
[34] AMBIPOLAR FIELD-EFFECT TRANSISTOR
PFLEIDERER, H
KUSIAN, W
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (03) : 317 - 319
[35] UNIPOLAR FIELD-EFFECT TRANSISTOR
DACEY, GC
ROSS, IM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (08): : 970 - 979
[36] EFFECT OF PRESSURE ON THE OUTPUT CHARACTERISTICS OF P-GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTOR
PATEL, D
MENONI, CS
SCHULT, DW
MCMAHON, T
GOODNICK, SM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (3-4) : 669 - 672
[37] Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor
Natori, K
Kimura, Y
Shimizu, T
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)
[38] T-Shaped III-V Heterojunction Tunneling Field-Effect Transistor
Dubey, Prabhat Kumar
Kaushik, Brajesh Kumar
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3120 - 3125
[39] Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs
Ameen, Tarek A.
Ilatikhameneh, Hesameddin
Fay, Patrick
Seabaugh, Alan
Rahman, Rajib
Klimeck, Gerhard
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (01) : 736 - 742
[40] HETEROJUNCTION ZNSE/INP FIELD-EFFECT TRANSISTOR BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
LEE, MK
LIAO, HC
HU, CC
YEH, MY
[J]. MATERIALS CHEMISTRY AND PHYSICS, 1994, 38 (04) : 398 - 401

← 1 2 3 4 5 →