SUBMICROMETER GATE LENGTH SCALING OF INVERSION CHANNEL HETEROJUNCTION FIELD-EFFECT TRANSISTOR

被引：2
|
作者：
KIELY, PA
VANG, TA
MICOVIC, M
LEPORE, A
TAYLOR, GW
MALIK, R
DOCTER, DP
EVALDSSON, PA
CLAISSE, PR
BROWNGOEBELER, KF
STORZ, F
机构：
[1] USA,RES LABS,FT MONMOUTH,NJ 07703
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 06期
关键词：
FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DEVICES;
D O I：
10.1049/el:19940354
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The scaling to 0.5mum of the inversion channel HFET with a single strained InGaAs quantum well is described. A unity current gain frequency of 40GHz, g(m) = 205mS/mm and V(TH) = -0.34V have been obtained for 0.5 x 100mum2 devices. For shorter gate lengths, threshold shifts are sizeable so that in order to scale further, modifications to the growth and processing are required.
引用
收藏
页码：529 / 531
页数：3
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