LOCALIZATION OF CURRENT IN SILICON DIODES AT HIGH FORWARD-CURRENT DENSITIES

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作者：
BURTSEV, EF
GREKHOV, IV
KRYUKOVA, NN
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1971年 / 4卷 / 10期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1675 / &
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