共 50 条
- [43] ELECTRONIC-STRUCTURE OF SEMICONDUCTORS WITH DOPING SUPER-LATTICES PHYSICAL REVIEW B, 1983, 27 (06): : 3538 - 3546
- [44] PHOTOEMISSION-STUDIES OF HETEROJUNCTION INTERFACE FORMATION - GE-GAAS(110) AND GE-SI(111) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 784 - 786
- [45] A structural and electronic property of GaAs and Ge and super-lattice GaAs / Ge (001) OPTIK, 2017, 140 : 223 - 232
- [48] Theoretical permittivity spectra of isoelectronic Ge, GaAs, ZnSe, and CuBr crystals Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2008, 2 : 768 - 771
- [49] PSEUDOPOTENTIAL CALCULATIONS OF THE VALENCE-BAND OFFSETS AT THE ZNSE/GE, ZNSE/GAAS, AND GAAS/GE (110) INTERFACES - EFFECTS OF THE GA AND ZN 3D ELECTRONS PHYSICAL REVIEW B, 1991, 43 (05): : 4229 - 4235
- [50] Charge accumulation in Ge quantum dots in a GaAs/ZnSe/QD-Ge/ZnSe/Ge floating gate transistor structure Journal of Experimental and Theoretical Physics Letters, 2003, 78 : 768 - 771