INFLUENCE OF THERMAL ANNEALING AND COOLING CONDITIONS ON THE ELECTROPHYSICAL PROPERTIES OF PHOSPHORUS-DOPED N-TYPE SI

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作者：
BARANSKII, PI
SAVYAK, VV
SHAPOVALOV, VP
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 08期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：888 / 889
页数：2
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