BILAYER REFLECTION-HIGH-ENERGY-ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS OBSERVED DURING GROWTH ON DOUBLE-DOMAIN SI(001) SURFACES

被引：10
|
作者：
OHTANI, N
MOKLER, SM
ZHANG, J
JOYCE, BA
机构：
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,BLACKETT LAB,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
[2] NIPPON STEEL CORP LTD,SEMICOND BASIC TECHNOL RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 12期
关键词：
D O I：
10.1063/1.107550
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Bilayer reflection-high-energy-electron diffraction (RHEED) intensity oscillations were observed during growth on a double-domain Si(001) substrate during silicon gas-source molecular beam epitaxy (Si-GSMBE) using disilane. A transition from monolayer- to bilayer-mode oscillation behavior was observed in the [110] azimuth during growth. Oscillations began with an asymmetric monolayer waveform which transformed into an apparent bilayer mode following several oscillation periods. Simultaneous measurement of RHEED intensity oscillations of the specular beam and (1 X 2) and (2 X 1) reconstruction related beams in the [010] azimuth showed that the bilayer oscillations resulted from alternating surface reconstructions. The origin of these bilayer oscillations is discussed on the basis of the anisotropic growth kinetics on Si(001) surfaces.
引用
收藏
页码：1399 / 1401
页数：3
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