MECHANISMS OF OXYGEN INCORPORATION IN CZOCHRALSKI-GROWN SILICON

被引：0
|
作者：
MURGAI, A [1 ]
机构：
[1] IBM CORP,E FISHKILL FACIL,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C92 / C92
页数：1
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