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- [41] Features of defect formation during the growth of double heterostructures for injection lasers based on AlxGa1 − xAsySb1 − y/GaSb materials Semiconductors, 2013, 47 : 1110 - 1115
- [42] Photoluminescence of InxG1-xAsySb1-y epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb 2004 1st International Conference on Electrical and Electronics Engineering (ICEEE), 2004, : 247 - 252
- [49] Theoretical study of electronic and positronic properties in GaxIn1-xPySbzAs1-y-z lattice matched to GaSb EUROPEAN PHYSICAL JOURNAL B, 2003, 32 (04): : 421 - 428