TEMPERATURE-DEPENDENCE OF IMPACT IONIZATION RATES IN GAAS BETWEEN 20-DEGREES AND 200-DEGREES-C

被引：18
|
作者：
CAPASSO, F
NAHORY, RE
POLLACK, MA
机构：
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 04期
关键词：
D O I：
10.1049/el:19790086
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：117 / 118
页数：2
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