TEMPERATURE-DEPENDENCE OF IMPACT IONIZATION RATES IN GAAS BETWEEN 20-DEGREES AND 200-DEGREES-C

被引：18

|

作者：

CAPASSO, F

NAHORY, RE

POLLACK, MA

机构：

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 04期

关键词：

D O I：

10.1049/el:19790086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：117 / 118

页数：2

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