RADIATION HARDNESS OF LSI-VLSI FABRICATION PROCESSES

被引：19

|

作者：

HUGHES, HL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 06期

关键词：

D O I：

10.1109/TNS.1979.4330271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：5053 / 5055

页数：3

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