INFLUENCE OF ELECTRICAL AND MAGNETIC-FIELDS ON CHARGE TRANSPORT IN HEAVILY DOPED AND STRONGLY COMPENSATED SEMICONDUCTORS

被引：0

作者：

ZABRODSKII, AG ^{[1
]}

IONOV, AI ^{[1
]}

SHLIMAK, IS ^{[1
]}

机构：

[1] AF IOFFE PHYSICOTECH INST, LENINGRAD, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：322 / 325

页数：4

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