TEMPERATURE-DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引：9

作者：

CHEN, BY ^{[1
]}

WU, WH ^{[1
]}

CHEN, JR ^{[1
]}

HONG, CS ^{[1
]}

机构：

[1] IND TECHNOL RES INST,MAT RES LABS,HSINCHU 31015,TAIWAN

来源：

JOURNAL OF MATERIALS SCIENCE | 1995年 / 30卷 / 09期

关键词：

D O I：

10.1007/BF01184569

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependence characteristics of hydrogenated amorphous silicon thin-film transistors were investigated. The results indicate that as the temperature was increased, the threshold voltage and the field-effect mobility were first increased, and then decreased, which may be controlled by different mechanisms at low and high temperatures. In addition, if the temperature was higher than 420 K, the Fermi level was promoted to the degenerate-like states, the current channel always existed due to the temperature effect, and the threshold voltage became negative.

引用

页码：2254 / 2256

页数：3

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