SURFACE DAMAGE OF SILICON BY HEAVY-IONS

被引：0
|
作者：
PRITCHARD, WM [1 ]
机构：
[1] OLD DOMINION UNIV, NORFOLK, VA 32508 USA
来源：
TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY | 1974年 / 19卷 / OCT27期
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D O I：
暂无
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
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页码：66 / 67
页数：2
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