SOME PROPERTIES OF PALLADIUM-DOPED SILICON

被引：0
|
作者：
AZIMOV, SA [1 ]
YUNUSOV, MS [1 ]
TURSUNOV, NA [1 ]
SULTANOV, NA [1 ]
机构：
[1] SV STARODUBTSEV PHYSICOTECH INST,TASHKENT,UZSSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 08期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：1252 / 1254
页数：3
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