HIGH-FMAX COLLECTOR-UP ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A HEAVILY CARBON-DOPED BASE FABRICATED USING OXYGEN-ION IMPLANTATION

被引：19
|
作者：
YAMAHATA, S
MATSUOKA, Y
ISHIBASHI, T
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3–1, Morinosato-Wakamiya
来源：
IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 04期
关键词：
D O I：
10.1109/55.215160
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaAs/GaAs collector-up HBT's with a heavily carbon-doped base layer were fabricated using oxygen-ion implantation and zinc diffusion. The high resistivity of the oxygen-ion implanted AlGaAs layer in the external emitter region effectively suppressed electron injection from the emitter, allowing collector current densities to reach values above 10(5) A/cm2. For a transistor with a 2-mum X 10-mum collector, f(T) was 70 GHz and f(max) was as high as 128 GHz. It was demonstrated by on-wafer measurements that the first power performance of collector-up HBT's resulted in maximum power-added efficiency as high as 63.4% at 3 GHz.
引用
收藏
页码：173 / 175
页数：3
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