POSITRON-LIFETIME AND DOPPLER-BROADENING INVESTIGATIONS OF GAMMA-IRRADIATED GAAS

被引：3
|
作者：
DANNEFAER, S [1 ]
PUFF, W [1 ]
机构：
[1] GRAZ TECH UNIV,INST KERNPHYS,A-8010 GRAZ,AUSTRIA
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.47.4775
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Gamma irradiation of four differently doped GaAs samples results in significant changes in the Doppler parameter S depending on the type of dopants. For Cd-doped GaAs, S increases (by 1.2%) after irradiation by only 10(16) photons/cm2, while for Si-doped GaAs, S decreases. Lifetime measurements indicate that upon irradiation an unresolved lifetime component appears with a value shorter than that for the monovacancy. The results are explained in terms of radiation-enhanced vacancy migration toward impurities.
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页码：4775 / 4778
页数：4
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