ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF THE XCUO - (1-X)V2O5

被引:17
|
作者
GOPALAKRISHNAN, R
CHOWDARI, BVR
TAN, KL
机构
[1] Department of Physics, National University of Singapore, Singapore
关键词
D O I
10.1016/0167-2738(92)90307-B
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Semi-conducting glasses in the binary system xCUO:(1-X)V2O5 have been synthesized using the twin-roller quenching technique. The electronic conductivity (sigma) of these glasses has been determined in the 295-473 K range to give a simple Arrhenius relationship. The sigma has been observed to increase to a maximum value of 3.47 X 10(-5) OMEGA-1 cm-1 at T = 295 K with an activation energy E(act) = 0.38 eV for the sample with x = 0.4 as the CuO content is systematically varied. The interatomic distance of vanadium atoms, calculated from density measurements, and E(act) have been found to have an inverse relationship with sigma. X-ray photoelectron spectroscopy (XPS) and X-ray excited Auger electron spectroscopy (XAES) investigations show that vanadium ions are present in reduced oxidation states. The proportion of vanadium ions with oxidation state 4 increases with an increase in CuO content. The electrical behavior of these glasses has been discussed in relation to the XPS and XAES data.
引用
收藏
页码:1168 / 1171
页数:4
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