共 50 条
- [1] MODEL SEMICONDUCTOR SURFACES - ARSENIC TERMINATION OF THE GE(111), SI(111) AND SI(100) SURFACES PHYSICA SCRIPTA, 1987, T17 : 7 - 12
- [4] ELECTRONIC-STRUCTURE OF SI AND GE(111) SURFACES AND THE SI-GE(111) INTERFACE PHYSICAL REVIEW B, 1985, 31 (04): : 2517 - 2520
- [5] MODEL FOR THE ENERGETICS OF SI AND GE (111) SURFACES PHYSICAL REVIEW B, 1987, 36 (11): : 6209 - 6212
- [6] ENERGETICS OF THE SI(111) AND GE(111) SURFACES AND THE EFFECT OF STRAIN PHYSICAL REVIEW B, 1993, 48 (08): : 5374 - 5385
- [7] ELECTRONIC-STRUCTURE OF THE ANNEALED SI(111) AND GE(111) SURFACES BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 351 - 351
- [8] Structure and stability of Bi layers on Si(111) and Ge(111) surfaces PHYSICAL REVIEW B, 1997, 56 (16): : 10283 - 10288
- [9] CHLORINE CHEMISORPTION ON SI(111), GE(111), AND GAAS(110) SURFACES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 628 - 630