THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS

被引:0
|
作者
VUL, BM
SEGAL, BI
机构
来源
SOVIET PHYSICS-TECHNICAL PHYSICS | 1958年 / 3卷 / 04期
关键词
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
下载
收藏
页码:637 / 645
页数:9
相关论文
共 50 条
  • [41] BREAKDOWN LOCALIZATION IN P-N JUNCTIONS
    ANUPYLD, AY
    GORYUNOV, NN
    DMITRIYE.AI
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 934 - +
  • [42] Implanted p-n junctions in GaN
    Cao, XA
    LaRoche, JR
    Ren, F
    Pearton, SJ
    Lothian, JR
    Singh, RK
    Wilson, RG
    Guo, HJ
    Pennycook, SJ
    SOLID-STATE ELECTRONICS, 1999, 43 (07) : 1235 - 1238
  • [43] p-n junctions in silicon nanowires
    Goncher, G.
    Solanki, R.
    Carruthers, J. R.
    Conley, J., Jr.
    Ono, Y.
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (07) : 1509 - 1512
  • [44] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
    SUNOHARA, Y
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
  • [45] ON P-N JUNCTIONS AT VARIABLE SIGNALS
    DOLOCAN, V
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 24 (06) : 589 - &
  • [46] THERMOELECTRIC BEHAVIOR OF P-N JUNCTIONS
    CUTLER, M
    JOURNAL OF APPLIED PHYSICS, 1961, 32 (02) : 222 - &
  • [47] THICK P-N JUNCTIONS IN GERMANIUM
    BRAY, R
    VANDERMAESEN, F
    PHYSICAL REVIEW, 1953, 91 (01): : 231 - 231
  • [48] p-n junctions in silicon nanowires
    G. Goncher
    R. Solanki
    J. R. Carruthers
    J. Conley
    Y. Ono
    Journal of Electronic Materials, 2006, 35 : 1509 - 1512
  • [49] Epitaxial Graphene p-n Junctions
    Hu, Jiuning
    Kruskopf, Mattias
    Yang, Yanfei
    Wu, Bi-Yi
    Tian, Jifa
    Panna, Alireza
    Rigosi, Albert F.
    Lee, Hsin-Yen
    Payagala, Shamith
    Jones, George R.
    Kraft, Marlin E.
    Jarrett, Dean G.
    Watanabe, Kenji
    Taniguchi, Takashi
    Elmquist, Randolph E.
    Newell, David B.
    2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018), 2018,
  • [50] ON P-N JUNCTION SIMILARITY IN SEMICONDUCTORS
    CHEREPANOV, VS
    KULKIN, KM
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (12): : 2009 - +