MOLECULAR-DYNAMICS SIMULATION OF THE DAMAGE FORMED IN SILICON AT ENERGIES NEAR THRESHOLD

被引:5
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作者
MAZZONE, AM
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10.1016/0168-583X(88)90680-5
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TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
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页码:776 / 779
页数:4
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