24 GBIT/S REGENERATING DEMULTIPLEXER IC IN SILICON BIPOLAR TECHNOLOGY

被引：8
|
作者：
HAUENSCHILD, J [1 ]
REIN, HM [1 ]
MCFARLAND, W [1 ]
PETTENGILL, D [1 ]
机构：
[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 06期
关键词：
DEMULTIPLEXERS; BIPOLAR DEVICES;
D O I：
10.1049/el:19910316
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 1:2 regenerating demultiplexer IC has been realised in an advanced selfaligned silicon bipolar technology using 0.8-mu-m lithography. The circuit can be operated up to 24Gbit/s at 5 V supply voltage. This is by far the highest data rate reported for a demultiplexer in any IC technology.
引用
收藏
页码：502 / 504
页数：3
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