PHOTOCAPACITY STUDY OF GRAIN-BOUNDARY RECOMBINATION IN SILICON

被引：0

|

作者：

BRONIATOWSKI, A

BERNARD, D

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1989年 / 24卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：155 / 155

页数：1

相关论文

共 50 条

[21] Grain-boundary viscosity of polycrystalline silicon carbides
Pezzotti, G
Kleebe, HJ
Ota, K
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1998, 81 (12) : 3293 - 3299
[22] STUDY OF GRAIN-BOUNDARY STRUCTURE
POSTNIKO.VS
IEVLEV, VM
SOLOVEV, KS
ZOLOTUKH.IV
FIZIKA METALLOV I METALLOVEDENIE, 1974, 37 (01): : 124 - 132
[23] DETERMINATION OF THE GRAIN-BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SILICON AS A FUNCTION OF ILLUMINATION FROM PHOTOCONDUCTANCE MEASUREMENTS
PANAYOTATOS, P
YANG, ES
HWANG, W
SOLID-STATE ELECTRONICS, 1982, 25 (05) : 417 - 422
[24] SPIN DEPENDENT TRAPPING AT A SILICON GRAIN-BOUNDARY
LENAHAN, PM
SCHUBERT, WK
SOLID STATE COMMUNICATIONS, 1983, 47 (06) : 423 - 425
[25] GRAIN-BOUNDARY DEFECT STATES IN POLYCRYSTALLINE SILICON
GINLEY, DS
SEAGER, CH
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1979, (APR): : 187 - 187
[26] THEORY OF POLYCRYSTALLINE SILICON SOLAR-CELLS - EFFECT OF REDUCTION IN GRAIN-BOUNDARY RECOMBINATION STATES
GHOSH, AK
FENG, T
MARUSKA, HP
SOLAR CELLS, 1980, 1 (04): : 421 - 429
[27] GRAIN-BOUNDARY DIFFUSION OF PHOSPHORUS IN POLYCRYSTALLINE SILICON
MURTI, MR
REDDY, KV
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (08) : 622 - 625
[28] GRAIN-BOUNDARY DIFFUSION OF PHOSPHORUS IN POLYCRYSTALLINE SILICON
HOLLOWAY, PH
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 19 - 22
[29] STUDY OF THE EFFECTIVE GRAIN-BOUNDARY RECOMBINATION VELOCITY UNDER DIFFERENT INJECTION LEVELS
DEPAUW, P
MERTENS, R
VANOVERSTRAETEN, R
LEUVEN, KU
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 234 - 237
[30] ROLE OF GRAIN-BOUNDARY DISLOCATIONS IN GRAIN-BOUNDARY SLIDING
GATES, RS
ACTA METALLURGICA, 1973, 21 (07): : 855 - 864

← 1 2 3 4 5 →