DEVELOPMENT OF HIGH-THERMAL-CONDUCTIVE SIC CERAMICS

被引：0
|
作者：
TAKEDA, Y [1 ]
机构：
[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 316,JAPAN
来源：
AMERICAN CERAMIC SOCIETY BULLETIN | 1988年 / 67卷 / 12期
关键词：
Integrated Circuits; LSI--Cooling - Semiconducting Silicon--Heat Transfer;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Large semiconductor chips generate greater heat. Therefore, heat dissipation has become a serious problem. To dissipate heat from semiconductor chips, a new type of substrate material is needed. A new generation of SiC ceramics has been developed which is suitable as substrate materials for Si semiconductors.
引用
收藏
页码：1961 / 1963
页数：3
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