LUMINESCENCE OF A-SI-C-H ALLOYS DEPOSITED WITH HYDROGEN DILUTION

被引：11
|
作者：
STREET, RA
NICKEL, NH
TSAI, CC
机构：
[1] Xerox Palo Alto Research Center, Palo Alto
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 190卷 / 1-2期
关键词：
D O I：
10.1016/0022-3093(95)00254-5
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Measurements of photoluminescence in a-Si:C:H alloys are reported. The alloys are grown at different Levels of hydrogen dilution in the plasma and the measurements are made to study how H dilution influences the defect and recombination properties. It is found that strong H dilution yields samples with low defect density and high photoluminescence efficiency. However, high H dilution also causes changes in band gap energy, which is partially responsible for the improved electronic properties.
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页码：33 / 37
页数：5
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