LUMINESCENCE OF A-SI-C-H ALLOYS DEPOSITED WITH HYDROGEN DILUTION

Measurements of photoluminescence in a-Si:C:H alloys are reported. The alloys are grown at different Levels of hydrogen dilution in the plasma and the measurements are made to study how H dilution influences the defect and recombination properties. It is found that strong H dilution yields samples with low defect density and high photoluminescence efficiency. However, high H dilution also causes changes in band gap energy, which is partially responsible for the improved electronic properties.