THE ROLE OF SILANE AND N2O IN THE CO2 LASER-CVD OF SILICON-OXIDE FILMS

被引：0
|
作者：
FERNANDEZ, D
GONZALEZ, P
POU, J
GARCIA, E
SERRA, J
LEON, B
PEREZAMOR, M
机构：
[1] Departamento de Física Aplicada, Universidad de Vigo, 36280 Vigo
来源：
APPLIED SURFACE SCIENCE | 1993年 / 69卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(93)90519-H
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The laser-CVD of silicon oxide films on silicon substrates has been carried out using a CW-CO2 laser in a parallel configuration, and with SiH4 and N2O as precursor gases. In this paper we report the influence of the reactant partial pressures on the film growth rate. The individual apparent orders of the chemical reaction for SiH4 and N2O have been determined.
引用
收藏
页码：281 / 284
页数：4
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