TEMPERATURE DEPENDENCE OF THE PIEZORESISTANCE OF HIGH-PURITY SILICON AND GERMANIUM

被引：160
|
作者：
MORIN, FJ
GEBALLE, TH
HERRING, C
机构：
来源：
PHYSICAL REVIEW | 1957年 / 105卷 / 02期
关键词：
D O I：
10.1103/PhysRev.105.525
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：525 / 539
页数：15
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