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THERMODYNAMIC PROPERTIES OF KONDO INSULATORS
被引:34
|作者:
CONTINENTINO, MA
[1
]
JAPIASSU, GM
[1
]
TROPER, A
[1
]
机构:
[1] CTR BRASILEIRO PESQUISAS FIS,BR-22290 RIO JANEIRO,BRAZIL
来源:
关键词:
D O I:
10.1103/PhysRevB.49.4432
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
A family of heavy-fermion materials that exhibits semiconducting-like properties has recently been discovered. A typical representative of this family is the SYSteM Ce3Bi4Pt3. Behavior similar to these rare-earth materials has also been observed in the compound FeSi. Using a two-band model and treating the electronic correlations beyond the mean-field level, we calculate the thermodynamic properties of this model for the case of two electrons per unit cell. We find that a hybridization gap appears above a critical value of the mixing term which depends on the ratio between the effective masses of the electrons in the large and narrow bands. The two-band model provides a unified description of the rare-earth and transition-metal-based systems. The results obtained for the temperature-dependent susceptibility are in good qualitative agreement with experimental data.
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页码:4432 / 4437
页数:6
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