GRAYTHORPS FLOATING GATE

被引：0
|
作者：
不详
机构：
来源：
CONCRETE | 1973年 / 7卷 / 08期
关键词：
D O I：
暂无
中图分类号：
TU [建筑科学];
学科分类号：
0813 ;
摘要：
引用
收藏
页码：26 / 27
页数：2
相关论文
共 50 条
  • [41] The GaN Trench Gate MOSFET with Floating Islands
    Shen, Lingyan
    Cheng, Xinhong
    Zhang, Dongliang
    Zheng, Li
    Xu, Dawei
    Gu, Ziyue
    Qian, Ru
    Yu, Yuehui
    2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) : INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS), 2017, : 163 - 167
  • [42] Capacitor model for a floating gate EEPROM cell
    Yang, D
    Axley, RS
    Ho, FD
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1998, 84 (06) : 561 - 581
  • [43] Floating-gate MOS Structures and Applications
    Sharma, Susheel
    Rajput, S. S.
    Jamuar, S. S.
    IETE TECHNICAL REVIEW, 2008, 25 (06) : 338 - 345
  • [44] Floating Gate CMOS Dosimeter With Frequency Output
    Garcia-Moreno, E.
    Isern, E.
    Roca, M.
    Picos, R.
    Font, J.
    Cesari, J.
    Pineda, A.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (02) : 373 - 378
  • [45] PLASMA FLOATING GATE ETCH PROCESSES FOR EEPROMS
    CHANG, PC
    HU, J
    CHERN, GC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C128 - C128
  • [46] Mechanism of radiation effects in floating gate ROMs
    He, CH
    Geng, B
    Yang, HL
    Chen, XH
    Li, GZ
    Wang, YP
    ACTA PHYSICA SINICA, 2003, 52 (09) : 2235 - 2238
  • [47] A study of residual characteristics in floating gate transistors
    Jia WANG
    Yiqiang ZHAO
    Ruishan XIN
    Mao YE
    ScienceChina(InformationSciences), 2018, 61 (06) : 250 - 252
  • [48] A study of residual characteristics in floating gate transistors
    Wang, Jia
    Zhao, Yiqiang
    Xin, Ruishan
    Ye, Mao
    SCIENCE CHINA-INFORMATION SCIENCES, 2018, 61 (06)
  • [49] Simulation of TID Effect on Floating Gate Cells
    Aguirre, C.
    Wirth, G.
    2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013), 2013,
  • [50] A FLOATING GATE AND ITS APPLICATION TO MEMORY DEVICES
    KAHNG, D
    SZE, SM
    BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1288 - +
12345