LINEWIDTH REBROADENING IN SEMICONDUCTOR-LASERS DUE TO LATERAL SPATIAL HOLEBURNING

被引：16
|
作者：
WENZEL, H
WUNSCHE, HJ
BANDELOW, U
机构：
[1] Humboldt- University, Department of Physics, D-O-1040 Berlin
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 25期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19911425
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The linewidth of semiconductor lasers is calculated taking into account a transversely inhomogeneous carrier distribution within the active region which gives an additional contribution to laser linewidth if the material linewidth enhancement factor is carrier density-dependent. For the first time it is theoretically shown that lateral spatial holeburning causes linewidth rebroadening in BH DFB lasers at high output power.
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页码：2301 / 2302
页数：2
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