ELECTRON-BEAM LITHOGRAPHY-TOOLS AND APPLICATIONS

被引:7
|
作者
HOHN, FJ
机构
关键词
ELECTRON BEAM LITHOGRAPHY; DIRECT WRITE; ELECTRON BEAM TOOLS; LITHOGRAPHY PROCESS; NANOFABRICATION; HIGH RESOLUTION; X-RAY MASK EXPOSURE; PHASE SHIFTING MASKS LITHOGRAPHY;
D O I
10.1143/JJAP.30.3088
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper describes the categories of electron beam lithography tools which to us seem to be of most importance. The first is a thermal field emission source gaussian round beam system. The overall performance to accomplish 0.05-mu-m imaging capability is presented. The second is a finely tuned variably shaped beam system which has the capability of delineating 0.15-mu-m dimensions at moderate throughput. Both systems have been integrated into a lithography sector with resist and process engineering as an integral part. We have applied this complete lithography sector to a variety of device runs ranging from 0.25-mu-m fully scaled all e-beam lithography, partially scaled mixed with optics, to mixed e-beam with e-beam lithography for less than 0.1-mu-m dimensions. Several non-direct write applications have been performed, such as the fabrication of 0.15-mu-m X-ray test masks and also phase shifting masks, for which we need the accuracy and registration capability of a high resolution direct write tool.
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页码:3088 / 3092
页数:5
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