CHARACTERIZATION OF THE IMPLANTATION DAMAGE IN SIO2 WITH X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：17
|
作者：
AJIOKA, T
USHIO, S
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 20期
关键词：
D O I：
10.1063/1.96921
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1398 / 1399
页数：2
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