670 NM SEMICONDUCTOR-LASER DIODE-PUMPED ERBIUM-DOPED FIBER AMPLIFIERS

被引：5
|
作者：
HORIGUCHI, M
YOSHINO, K
SHIMIZU, M
YAMADA, M
机构：
[1] NTT Optoelectronics Laboratories, Ibaraki-Ken, 319-11, Tokai-Mura, Naka-Gun
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 07期
关键词：
FIBER LASERS; SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19930398
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A highly efficient Er-doped fibre amplifier pumped by a visible laser diode is reported. Using a 670 nm AlGaInP laser diode as a pump light source and a high NA erbium-doped fibre, the EDFA realised a maximum signal pin of 33 dB at 1535 nm, with a saturated output power of 4 dBm. A maximum pin coefficient of 3.0 dB/mW was achieved for 670 nm laser diode pumping.
引用
收藏
页码：593 / 595
页数：3
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