ALL-OPTICAL PHOTONIC SWITCHES USING INTEGRATED INVERTED ASYMMETRIC FABRY-PEROT MODULATORS AND HETEROJUNCTION PHOTOTRANSISTORS

被引：4
|
作者：
HU, KZ
CHEN, L
KAVIANI, K
CHEN, P
MADHUKAR, A
机构：
[1] UNIV SO CALIF,DEPT ELECT ENGN,PHOTON MAT & DEVICES LAB,LOS ANGELES,CA 90089
[2] UNIV SO CALIF,DEPT MAT SCI & ENGN,PHOTON MAT & DEVICES LAB,LOS ANGELES,CA 90089
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 03期
关键词：
D O I：
10.1109/68.122387
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using "normally on" modulator pixels exhibit an output on-off ratio of 12:1 with an internal optical gain of 4 dB. The photonic switches using "normally off" modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing.
引用
收藏
页码：263 / 266
页数：4
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