CONDUCTION-BAND AND VALENCE-BAND STRUCTURES IN STRAINED IN1-XGAXAS/INP QUANTUM-WELLS ON (001)INP SUBSTRATES

被引：0
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作者：
SUGAWARA, M
OKAZAKI, N
FUJII, T
YAMAZAKI, S
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We calculated conduction-band effective mass of biaxially strained In1-xGaxAs and In1-xGax As/InP quantum wells on (001) InP substrates based on k.p perturbation approach. By magneto-optical absorption spectra, we determined Luttinger-Kohn parameters for valence bands. Based on the determined band structures, we show that both biaxial compressive and tensile strain can lower the threshold current density of quantum-well lasers by factors 2-3.
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页码：379 / 384
页数：6
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