SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION FOR THE ELECTRONIC-STRUCTURE OF A (INAS)1(GAAS)1 MONOLAYER SUPERLATTICE

被引：22

|

作者：

TAGUCHI, A

OHNO, T

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.36.1696

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：1696 / 1702

页数：7

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