THE SI-H IR ABSORPTION-BANDS IN NTD FZ (H2) SI AND THEIR IDENTIFICATION

被引：9

作者：

MENG, XT

机构：

[1] Institute of Nuclear Energy Technology, Tsinghua, University Beijing

来源：

PHYSICA B | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90132-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The 1832, 2054, 1980, 2066, 1970, 1984, 2016 and 2050-2150 cm-1 Si-H infrared absorption bands in neutron transmutation doped FZ-silicon grown in a hydrogen atmosphere have been identified.

引用

页码：249 / 252

页数：4

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