THE SI-H IR ABSORPTION-BANDS IN NTD FZ (H2) SI AND THEIR IDENTIFICATION

被引：9
|
作者：
MENG, XT
机构：
[1] Institute of Nuclear Energy Technology, Tsinghua, University Beijing
来源：
PHYSICA B | 1991年 / 170卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(91)90132-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The 1832, 2054, 1980, 2066, 1970, 1984, 2016 and 2050-2150 cm-1 Si-H infrared absorption bands in neutron transmutation doped FZ-silicon grown in a hydrogen atmosphere have been identified.
引用
收藏
页码：249 / 252
页数：4
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