NEUTRON TRANSMUTATION DOPED SILICON DETECTORS WITH IMPROVED CARRIER LIFETIME

被引：2

作者：

KIM, C ^{[1
]}

HUSIMI, K ^{[1
]}

OHKAWA, S ^{[1
]}

机构：

[1] UNIV TOKYO, INST NUCL STUDY, TANASHI, TOKYO 188, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 193卷 / 1-2期

关键词：

D O I：

10.1016/0029-554X(82)90675-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：69 / 72

页数：4

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