NEUTRON TRANSMUTATION DOPED SILICON DETECTORS WITH IMPROVED CARRIER LIFETIME

被引：2
|
作者：
KIM, C [1 ]
HUSIMI, K [1 ]
OHKAWA, S [1 ]
机构：
[1] UNIV TOKYO, INST NUCL STUDY, TANASHI, TOKYO 188, JAPAN
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 193卷 / 1-2期
关键词：
D O I：
10.1016/0029-554X(82)90675-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：69 / 72
页数：4
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