ELECTRICALLY ALTERABLE NON-VOLATILE MEMORY CELL USING A FLOATING-GATE STRUCTURE

被引：7
|
作者：
GUTERMAN, DC
RIMAWI, IH
CHIU, TL
HALVORSON, RD
MCELROY, DJ
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1979年 / 14卷 / 02期
关键词：
D O I：
10.1109/JSSC.1979.1051202
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：498 / 508
页数：11
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