ELECTRONIC STATES OF FLORINATED AMORPHOUS-SILICON

被引：14
|
作者：
CHING, WY [1 ]
机构：
[1] ARGONNE NATL LAB,ARGONNE,IL 60439
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期
关键词：
D O I：
10.1016/0022-3093(80)90572-4
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：61 / 66
页数：6
相关论文
共 50 条
  • [21] DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON
    GOLIKOVA, OA
    KAZANIN, MM
    MEZDROGINA, MM
    SOROKINA, KL
    FEOKTISTOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (10): : 1199 - 1200
  • [22] PHONON DENSITY OF STATES OF AMORPHOUS-SILICON
    SHANKS, HR
    KAMITAKAHARA, WA
    MCCLELLAND, JF
    CARLONE, C
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 197 - 200
  • [23] SURFACE-STATES ON AMORPHOUS-SILICON
    WEISZ, SZ
    AVALOS, J
    GOMEZ, M
    MANY, A
    GOLDSTEIN, Y
    SAVIR, E
    SURFACE SCIENCE, 1995, 338 (1-3) : 117 - 124
  • [24] HYDROGEN DIFFUSION AND ELECTRONIC METASTABILITY IN AMORPHOUS-SILICON
    STREET, RA
    PHYSICA B, 1991, 170 (1-4): : 69 - 81
  • [25] A MODEL FOR THE ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON
    OVERHOF, H
    BEYER, W
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (03): : 433 - 450
  • [26] ELECTRONIC SWITCHING IN AMORPHOUS-SILICON JUNCTION DEVICES
    LECOMBER, PG
    OWEN, AE
    SPEAR, WE
    HAJTO, J
    CHOI, WK
    SEMICONDUCTORS AND SEMIMETALS, 1984, 21 : 275 - 289
  • [27] ELECTRONIC-STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON
    ADLER, D
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) : 77 - 89
  • [28] ELECTRONIC-STRUCTURE OF DEFECTS IN AMORPHOUS-SILICON
    AGRAWAL, S
    AGRAWAL, BK
    SOLID STATE COMMUNICATIONS, 1984, 50 (06) : 469 - 471
  • [29] ELECTRONIC TRANSPORT IN AMORPHOUS-SILICON BACKBONE POLYMERS
    ABKOWITZ, M
    KNIER, FE
    YUH, HJ
    WEAGLEY, RJ
    STOLKA, M
    SOLID STATE COMMUNICATIONS, 1987, 62 (08) : 547 - 550
  • [30] TRANSIENT ELECTRONIC RESPONSE IN HYDROGENATED AMORPHOUS-SILICON
    SILVER, M
    SNOW, E
    ADLER, D
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3503 - 3507
12345