FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET

被引：6
|
作者：
MOCHIZUKI, T
TSUJIMARU, T
KASHIWAGI, M
NISHI, Y
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1980年 / 15卷 / 04期
关键词：
D O I：
10.1109/JSSC.1980.1051428
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：496 / 500
页数：5
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