PULSED LASER-INDUCED TRANSIENT THERMOELECTRIC EFFECTS IN SILICON-CRYSTALS

被引：64
|
作者：
SASAKI, M
NEGISHI, H
INOUE, M
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 03期
关键词：
D O I：
10.1063/1.336600
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：796 / 802
页数：7
相关论文
共 50 条
  • [21] Laser-induced thermoelectric effects in electrically biased nanoscale constrictions
    Mennemanteuil, Marie-Maxime
    Colas-des-Francs, Gerard
    Buret, Mickael
    Dasgupta, Arindam
    Cuadrado, Alexander
    Alda, Javier
    Bouhelier, Alexandre
    NANOPHOTONICS, 2018, 7 (12) : 1917 - 1927
  • [22] TRANSIENT THERMOELECTRIC EFFECTS IN GAAS CRYSTALS
    SASAKI, M
    HORISAKA, S
    INOUE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (10): : 1704 - 1708
  • [23] HYDROGEN EFFECTS ON OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON-CRYSTALS
    HARA, A
    AOKI, M
    FUKUDA, T
    OHSAWA, A
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) : 913 - 916
  • [24] Transient reflectance of silicon carbide during laser-induced phase separation
    Pflug, Theo
    Bernard, Benjamin
    Jahn, Falko
    Gobald, Michael
    Weissmantel, Steffen
    Horn, Alexander
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2024, 130 (06):
  • [25] Pulsed laser-induced ablation of absorbing liquids and acoustic-transient generation
    D. Kim
    M. Ye
    C.P. Grigoropoulos
    Applied Physics A, 1998, 67 : 169 - 181
  • [26] Laser-induced effects in raman spectra of nanocrystalline silicon
    Rybaltovskii, A.O.
    Bagratashvili, V.N.
    Ishchenko, A.A.
    Minaev, N.V.
    Kononov, N.N.
    Dorofeev, S.G.
    Krutikova, A.A.
    Ol'khov, A.A.
    Nanotechnologies in Russia, 2012, 7 (7-8): : 421 - 427
  • [27] Pulsed laser-induced ablation of absorbing liquids and acoustic-transient generation
    Kim, D
    Ye, M
    Grigoropoulos, CP
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 67 (02): : 169 - 181
  • [28] Importance of surface topography on pulsed laser-induced damage threshold of Sapphire crystals
    Benoît Bussière
    Nicolas Sanner
    Marc Sentis
    Olivier Utéza
    Scientific Reports, 7
  • [29] Importance of surface topography on pulsed laser-induced damage threshold of Sapphire crystals
    Bussiere, Benoit
    Sanner, Nicolas
    Sentis, Marc
    Uteza, Olivier
    SCIENTIFIC REPORTS, 2017, 7
  • [30] INFLUENCE OF THERMAL ANNEALING ON THERMOELECTRIC PROPERTIES OF NORMAL AND NEUTRON-DOPED SILICON-CRYSTALS
    BARANSKII, PI
    VIDALKO, EI
    SAVYAK, VV
    SHAPOVALOV, VP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (12): : 1434 - 1436
12345